Failure dynamics of the IGBT during turn-off for undamped inductive loading conditions

Chih Chieh Shen, Allen R. Hefner, David W. Berning, Joseph B. Bernstein

نتاج البحث: نشر في مجلةمقالةمراجعة النظراء

40 اقتباسات (Scopus)

ملخص

The internal failure dynamics of the insulated gate bipolar transistor (IGBT) for undamped inductive switching (UIS) conditions are studied using simulations and measurements. The UIS measurements are made using a unique, automated nondestructive reverse-bias safe operation area test system. Simulations are performed with an advanced IGBT circuit simulator model for UIS conditions to predict the mechanisms and conditions for failure. It is shown that the conditions for UIS failure and the shape of the anode voltage avalanche-sustaining waveforms during turn-off vary with the IGBT temperature, and turn-off current level. Evidence of single- and multiple-filament formation is presented and supported with both measurements and simulations.

اللغة الأصليةالإنجليزيّة
الصفحات (من إلى)614-624
عدد الصفحات11
دوريةIEEE Transactions on Industry Applications
مستوى الصوت36
رقم الإصدار2
المعرِّفات الرقمية للأشياء
حالة النشرنُشِر - 2000
منشور خارجيًانعم

بصمة

أدرس بدقة موضوعات البحث “Failure dynamics of the IGBT during turn-off for undamped inductive loading conditions'. فهما يشكلان معًا بصمة فريدة.

قم بذكر هذا