Exploring the effects of molecular beam epitaxy growth characteristics on the temperature performance of state-of-the-art terahertz quantum cascade lasers

Keyphrases

• Abrupt Interface 66%
• Aluminum Content 16%
• Atom Probe Tomography 16%
• Atomic Layers 16%
• Background Doping 16%
• Comparative Analysis 16%
• Design Tools 16%
• Device Performance 16%
• Doping Density 16%
• Graded Interface 16%
• Growth Characteristics 100%
• Growth Rate 16%
• High Performance 16%
• High Temperature Operation 16%
• High-quality Interface 16%
• High-quality Processes 16%
• Interface Roughness 100%
• Interface Sharpening 16%
• Maximum Operation Temperature 16%
• MBE Growth 16%
• Mid-infrared 16%
• Molecular Beam Epitaxy 100%
• Nonequilibrium Green's Function 66%
• Performance Anomaly 16%
• Reactor 16%
• Reference Instrument 16%
• Roughness Height 66%
• Roughness Parameters 16%
• Single Device 16%
• Temperature Performance 100%
• Terahertz Quantum Cascade Laser 100%
• Three-level System 16%
• Tmax 83%
• Two-state 16%

Engineering

• Atom Probe Tomography 16%
• Atomic Layer 16%
• Comparative Analysis 16%
• Design Tool 16%
• Device Performance 16%
• Doping Density 16%
• Green's Functions 66%
• High Operating Temperature 16%
• Main Difference 16%
• Maximum Operating Temperature 16%
• Monolayers 16%
• Nonequilibrium 66%
• Roughness Height 66%
• Roughness Parameter 16%
• Terahertz 100%

Material Science

• Aluminum 33%
• Atom Probe 33%
• Density 33%
• Molecular Beam Epitaxy 100%
• Monolayers 33%
• Tomography 33%
• Tool Design 33%