Electromigration simulation under DC/AC stresses considering microstructure

Wei Zhang; Joseph B. Bernstein

doi:10.1109/IITC.1999.787072

Electromigration simulation under DC/AC stresses considering microstructure

نتاج البحث: فصل من :كتاب / تقرير / مؤتمر › منشور من مؤتمر › مراجعة النظراء

ملخص

In this work, we present a dynamic finite difference simulation on the stress evolution along the interconnect under both DC and AC current densities, while taking into account the inhomogeneity of grain size and grain boundary orientation. Furthermore, we related both the accelerating stress and microstructural conditions to the lifetime by assuming certain built-up stress levels as failure criteria.

اللغة الأصلية	الإنجليزيّة
عنوان منشور المضيف	Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999
ناشر	Institute of Electrical and Electronics Engineers Inc.
الصفحات	41-43
عدد الصفحات	3
رقم المعيار الدولي للكتب (الإلكتروني)	0780351746, 9780780351745
المعرِّفات الرقمية للأشياء	https://doi.org/10.1109/IITC.1999.787072
حالة النشر	نُشِر - 1999
منشور خارجيًا	نعم
الحدث	1999 IEEE International Interconnect Technology Conference, IITC 1999 - San Francisco, الولايات المتّحدة المدة: ٢٤ مايو ١٩٩٩ → ٢٦ مايو ١٩٩٩

سلسلة المنشورات

الاسم	Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999

!!Conference

!!Conference	1999 IEEE International Interconnect Technology Conference, IITC 1999
الدولة/الإقليم	الولايات المتّحدة
المدينة	San Francisco
المدة	٢٤/٠٥/٩٩ → ٢٦/٠٥/٩٩

الوصول إلى المستند

10.1109/IITC.1999.787072

الملفات والروابط الأخرى

Link to publication in Scopus

قم بذكر هذا

Zhang, W., & Bernstein, J. B. (1999). Electromigration simulation under DC/AC stresses considering microstructure. في Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999 (الصفحات 41-43). المقال 787072 (Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IITC.1999.787072

Zhang, Wei ; Bernstein, Joseph B. / Electromigration simulation under DC/AC stresses considering microstructure. Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999. Institute of Electrical and Electronics Engineers Inc., 1999. الصفحات 41-43 (Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999).

@inproceedings{66a452438856418c85cbf8ab1b83aad9,

title = "Electromigration simulation under DC/AC stresses considering microstructure",

abstract = "In this work, we present a dynamic finite difference simulation on the stress evolution along the interconnect under both DC and AC current densities, while taking into account the inhomogeneity of grain size and grain boundary orientation. Furthermore, we related both the accelerating stress and microstructural conditions to the lifetime by assuming certain built-up stress levels as failure criteria.",

author = "Wei Zhang and Bernstein, {Joseph B.}",

note = "Publisher Copyright: {\textcopyright} 1999 IEEE.; 1999 IEEE International Interconnect Technology Conference, IITC 1999 ; Conference date: 24-05-1999 Through 26-05-1999",

year = "1999",

doi = "10.1109/IITC.1999.787072",

language = "אנגלית",

series = "Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "41--43",

booktitle = "Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999",

address = "ארצות הברית",

}

Zhang, W & Bernstein, JB 1999, Electromigration simulation under DC/AC stresses considering microstructure. في Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999., 787072, Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999, Institute of Electrical and Electronics Engineers Inc., الصفحات 41-43, 1999 IEEE International Interconnect Technology Conference, IITC 1999, San Francisco, الولايات المتّحدة, ٢٤/٠٥/٩٩. https://doi.org/10.1109/IITC.1999.787072

Electromigration simulation under DC/AC stresses considering microstructure. / Zhang, Wei; Bernstein, Joseph B.
Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999. Institute of Electrical and Electronics Engineers Inc., 1999. صفحة 41-43 787072 (Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999).

نتاج البحث: فصل من :كتاب / تقرير / مؤتمر › منشور من مؤتمر › مراجعة النظراء

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Zhang W, Bernstein JB. Electromigration simulation under DC/AC stresses considering microstructure. في Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999. Institute of Electrical and Electronics Engineers Inc. 1999. صفحة 41-43. 787072. (Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999). doi: 10.1109/IITC.1999.787072

Electromigration simulation under DC/AC stresses considering microstructure

ملخص

سلسلة المنشورات

!!Conference

الوصول إلى المستند

الملفات والروابط الأخرى

بصمة

قم بذكر هذا