Design of High-Frequency GaN HEMT-Based DC–DC Converter

Switch-mode power converters commonly operate at switching frequencies from kilohertz to a few megahertz, traditionally relying on silicon-based transistors and control circuitry. However, parasitic limitations in silicon devices constrain further frequency scaling. This article presents a fully gallium nitride (GaN)-based dc–dc converter designed for high-frequency operation. The proposed architecture employs a GaN-based ring oscillator for on-chip pulsewidth modulation generation and includes all converter modules operating within the 8–43 MHz range. Experimental results validate the proposed design, demonstrating its feasibility and performance in high-frequency power conversion. The findings support the development of integrated GaN-based power conversion systems for advanced system-on-chip applications.