ملخص
A new technique of gold nanoparticle (AuNP) growth on the sidewalls of WS2 inorganic nanotubes (INT-WS2) and the surface of MoS2 fullerene-like nanoparticles (IF-MoS2) is developed to produce metal-semiconductor nanocomposites. The coverage density and mean size of the nanoparticles are dependent on the HAuCl4/MS2 (M = W, Mo) molar ratio. AuNPs formation mechanism seems to involve spatially divided reactions of AuCl4- reduction and WS 2/MoS2 oxidation taking place on the surface defects of the disulfide nanostructures rather than directly at the AuNP-INT/IF interface. A strong epitaxial matching between the lattices of the gold nanoparticles and the INT-WS2 or IF-MoS2 seems to suppress plasmon resonance in the nanocomposites with small (<10 nm mean size) AuNPs.
اللغة الأصلية | الإنجليزيّة |
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الصفحات (من إلى) | 2161-2169 |
عدد الصفحات | 9 |
دورية | Journal of Physical Chemistry C |
مستوى الصوت | 118 |
رقم الإصدار | 4 |
المعرِّفات الرقمية للأشياء | |
حالة النشر | نُشِر - 30 يناير 2014 |
منشور خارجيًا | نعم |