Comparison of silicon carbide and GaAs schottky diode

Keyphrases

• Gallium Arsenide 100%
• Silicon Carbide 100%
• GaAs Schottky Diode 100%
• Silicon Carbide Schottky Barrier Diode 100%
• Power Device 75%
• Device Application 50%
• High Temperature 25%
• Temperature Effect 25%
• Current Density 25%
• Activation Energy 25%
• Commercially Available 25%
• Thermal Conductivity 25%
• Accelerated Life Test 25%
• Mean Time to Failure 25%
• High Temperature Operation 25%
• Electrical Performance 25%
• Electrical Reliability 25%
• Electron Drift Velocity 25%
• High Forward Current 25%
• Test Temperature 25%
• Baliga's Figure of Merit 25%
• GaAs Devices 25%
• Scattering Theory 25%
• On-state 25%
• Electric Breakdown Field 25%
• Device Characterization 25%
• High-temperature Device 25%
• Reverse Breakdown Voltage 25%
• Phonon Scattering 25%

Engineering

• Gallium Arsenide 100%
• Power Device 60%
• Temperature Dependence 20%
• Activation Energy 20%
• Thermal Conductivity 20%
• Drift Velocity 20%
• Figure of Merit 20%
• Accelerated Life Test 20%
• Electrical Performance 20%
• Mean Time to Failure 20%
• Gaas Device 20%
• Breakdown Voltage 20%
• Test Temperature 20%
• Breakdown Field 20%
• High Operating Temperature 20%

Material Science

• Gallium Arsenide 100%
• Schottky Diode 100%
• Silicon Carbide 100%
• Power Device 50%
• Density 16%
• Activation Energy 16%
• Thermal Conductivity 16%