Challenges of high-κ gate dielectrics for future MOS devices

J. S. Suehle; E. M. Vogel; M. D. Edelstein; C. A. Richter; N. V. Nguyen; I. Levin; D. L. Kaiser; H. Wu; J. B. Bernstein

Challenges of high-κ gate dielectrics for future MOS devices

J. S. Suehle
, E. M. Vogel
, M. D. Edelstein
, C. A. Richter
, N. V. Nguyen
, I. Levin
, D. L. Kaiser
, H. Wu
, J. B. Bernstein

نتاج البحث: نتاج بحثي من مؤتمر › محاضرة › مراجعة النظراء

16 اقتباسات (Scopus)

ملخص

A study on requirements and challenges associated with high permittivity gate dielectrics for metal oxide semiconductor devices was presented. Issues related to processing, dielectric constant, capacitance, bandgap, tunnel current and reliability were discussed. The replacement of silicon dioxide in gates with dielectric materials of high permittivity was found to be difficult for integrated circuit manufacturing.

اللغة الأصلية	الإنجليزيّة
الصفحات	90-93
عدد الصفحات	4
حالة النشر	نُشِر - 2001
منشور خارجيًا	نعم
الحدث	6th International Symposium on Plasma- and Process-Induced Damage - Monterrrey, CA, الولايات المتّحدة المدة: 13 مايو 2001 → 15 مايو 2001

!!Conference

!!Conference	6th International Symposium on Plasma- and Process-Induced Damage
الدولة/الإقليم	الولايات المتّحدة
المدينة	Monterrrey, CA
المدة	13/05/01 → 15/05/01

الملفات والروابط الأخرى

Link to publication in Scopus

قم بذكر هذا

@conference{9ccf81efbb4a40198644b3229749f676,

title = "Challenges of high-κ gate dielectrics for future MOS devices",

abstract = "A study on requirements and challenges associated with high permittivity gate dielectrics for metal oxide semiconductor devices was presented. Issues related to processing, dielectric constant, capacitance, bandgap, tunnel current and reliability were discussed. The replacement of silicon dioxide in gates with dielectric materials of high permittivity was found to be difficult for integrated circuit manufacturing.",

author = "Suehle, \{J. S.\} and Vogel, \{E. M.\} and Edelstein, \{M. D.\} and Richter, \{C. A.\} and Nguyen, \{N. V.\} and I. Levin and Kaiser, \{D. L.\} and H. Wu and Bernstein, \{J. B.\}",

year = "2001",

language = "אנגלית",

pages = "90--93",

note = "6th International Symposium on Plasma- and Process-Induced Damage ; Conference date: 13-05-2001 Through 15-05-2001",

}

Suehle, JS, Vogel, EM, Edelstein, MD, Richter, CA, Nguyen, NV, Levin, I, Kaiser, DL, Wu, H & Bernstein, JB 2001, 'Challenges of high-κ gate dielectrics for future MOS devices', الأوراق المقدمة في 6th International Symposium on Plasma- and Process-Induced Damage, Monterrrey, CA, الولايات المتّحدة, 13/05/01 - 15/05/01 الصفحات 90-93.

Challenges of high-κ gate dielectrics for future MOS devices. / Suehle, J. S.; Vogel, E. M.; Edelstein, M. D. وآخرون.
2001. 90-93 الأوراق المقدمة في 6th International Symposium on Plasma- and Process-Induced Damage, Monterrrey, CA, الولايات المتّحدة.

نتاج البحث: نتاج بحثي من مؤتمر › محاضرة › مراجعة النظراء

TY - CONF

T1 - Challenges of high-κ gate dielectrics for future MOS devices

AU - Suehle, J. S.

AU - Vogel, E. M.

AU - Edelstein, M. D.

AU - Richter, C. A.

AU - Nguyen, N. V.

AU - Levin, I.

AU - Kaiser, D. L.

AU - Wu, H.

AU - Bernstein, J. B.

PY - 2001

Y1 - 2001

N2 - A study on requirements and challenges associated with high permittivity gate dielectrics for metal oxide semiconductor devices was presented. Issues related to processing, dielectric constant, capacitance, bandgap, tunnel current and reliability were discussed. The replacement of silicon dioxide in gates with dielectric materials of high permittivity was found to be difficult for integrated circuit manufacturing.

AB - A study on requirements and challenges associated with high permittivity gate dielectrics for metal oxide semiconductor devices was presented. Issues related to processing, dielectric constant, capacitance, bandgap, tunnel current and reliability were discussed. The replacement of silicon dioxide in gates with dielectric materials of high permittivity was found to be difficult for integrated circuit manufacturing.

UR - https://www.scopus.com/pages/publications/0034835458

M3 - ???researchoutput.researchoutputtypes.contributiontoconference.paper???

AN - SCOPUS:0034835458

SP - 90

EP - 93

T2 - 6th International Symposium on Plasma- and Process-Induced Damage

Y2 - 13 May 2001 through 15 May 2001

ER -

Challenges of high-κ gate dielectrics for future MOS devices

ملخص

!!Conference

الملفات والروابط الأخرى

بصمة

قم بذكر هذا