Atomic force microscopy investigation of dislocation structures and deformation characteristics in neutron irradiated silicon detectors

G. Golan, E. Rabinovich, A. Inberg, A. Axelevitch, M. Oksman, Y. Rosenwaks, A. Kozlovsky, P. J. Rancoita, M. Rattagi, A. Seidman, N. Croitoru

نتاج البحث: فصل من :كتاب / تقرير / مؤتمرمنشور من مؤتمرمراجعة النظراء

ملخص

The structure, microhardness and deformation character for silicon detectors were investigated following a neutron irradiation, using optical and Atomic Force (AFM) microscopes. The results of these investigations have given an important contribution to the understanding of silicon damage process by neutron irradiation. It was shown that in the interval of neutron fluences 9.9×1010≤Φ≤3.12×1015 n/cm 2 the damage is accumulative (from small punctual to large defects). The abrupt changes of microstructure together with the electrical and mechanical properties were found for Φ≥1014n/cm2 Different kinds of defects (dislocations and interstitials) and their complexes appeared under neutron irradiation. For all fluences the regions ("White" -"W") with a microhardness smaller than in nonirradiated silicon were observed. Microhardness is larger in the regions where the concentration of dislocation loops is high. The "W", regions have a small number of the dislocations loops, and single punctual defects were seen there using Atomic Force Microscope. The dislocation loops are placed in specific ("Black"-"B") regions, which increase in size with the increase of neutron fluence due to a process of vacancies and interstitials accumulation.

اللغة الأصليةالإنجليزيّة
عنوان منشور المضيف2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
ناشرIEEE Computer Society
الصفحات363-366
عدد الصفحات4
رقم المعيار الدولي للكتب (المطبوع)0780352351, 9780780352353
المعرِّفات الرقمية للأشياء
حالة النشرنُشِر - 2000
منشور خارجيًانعم
الحدث2000 22nd International Conference on Microelectronics, MIEL 2000 - Nis, صربيا
المدة: ١٤ مايو ٢٠٠٠١٧ مايو ٢٠٠٠

سلسلة المنشورات

الاسم2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
مستوى الصوت1

!!Conference

!!Conference2000 22nd International Conference on Microelectronics, MIEL 2000
الدولة/الإقليمصربيا
المدينةNis
المدة١٤/٠٥/٠٠١٧/٠٥/٠٠

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