A new method for measuring ambipolar mobility and its implementation in p-type HgCdTe

A new method for measuring the ambipolar mobility is described. It is based on the determination of the travel time of excess carriers between two probes. Maintaining the device under a constant voltage, the travel time is depicted as the separation between two zeros on the output trace. Using this technique the ambipolar mobility of electrons in p-type Hg _0.71Cd_0.29Te was measured for the temperature range of 78-256 K.