ملخص
A new method for measuring the ambipolar mobility is described. It is based on the determination of the travel time of excess carriers between two probes. Maintaining the device under a constant voltage, the travel time is depicted as the separation between two zeros on the output trace. Using this technique the ambipolar mobility of electrons in p-type Hg 0.71Cd0.29Te was measured for the temperature range of 78-256 K.
اللغة الأصلية | الإنجليزيّة |
---|---|
الصفحات (من إلى) | 1161-1164 |
عدد الصفحات | 4 |
دورية | Journal of Applied Physics |
مستوى الصوت | 57 |
رقم الإصدار | 4 |
المعرِّفات الرقمية للأشياء | |
حالة النشر | نُشِر - 1985 |
منشور خارجيًا | نعم |